PART |
Description |
Maker |
UPD44321361GF-A75 UPD44321181 UPD44321181GF-A75 |
32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
|
NEC[NEC]
|
UPD44321182GF-A50 UPD44321362GF-A50 |
Film Capacitor; Voltage Rating:630VDC; Capacitor Dielectric Material:Polypropylene; Capacitance:22000pF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:Yes; Series:171; Termination:Radial Leaded 32M-BIT ZEROSB SRAM PIPELINED OPERATIO
|
NEC Corp.
|
GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM 150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM 200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
AT52BR3224 |
32M bit single plane Flash combined with a 4M bit or 8M bit SRAM From old datasheet system
|
Atmel Corp
|
MC-222252AF9-B85X-BT3 MC-222252A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
MC-222273F9-B85X-BT3 MC-222273-X |
MCP(32M-bit flash memory 8M-bit Low Power SRAM)
|
NEC
|
MC-222243AF9-B85X-BT3 MC-222243A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
IDT71V633S11PF IDT71V633S11PFI IDT71V633S12PFI IDT |
From old datasheet system 64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect 3.3V 64K x 32 Static SRAM with Flow-Through Outputs
|
IDT[Integrated Device Technology]
|
AS7C33256FT18B AS7C33256FT18BV.1.4 AS7C33256FT18B- |
3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 8 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 10 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 6.5 ns, PQFP100 Sync SRAM - 3.3V From old datasheet system
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|